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| MGA-412P8 GaAs Enhancement-mode pHEMT Power Amplifier optimized for IEEE 802.11b/g applications Data Sheet Description Avago Technologies's MGA-412P8 linear power amplifier is designed for applications in the (1.7-3) GHz frequency range. The amplifier is optimized for IEEE 802.11b/g WLAN applications and has a best-inclass efficiency (PAE) of 25.5% (54Mbps OFDM) achieved through the use of Avago Technologies' proprietary GaAs Enhancement-mode pHEMT process. The MGA-412P8 is housed in a miniature 2.0 x 2.0 x 0.75mm 3 8-lead leadless-plastic-chip-carrier (LPCC) package. The compact footprint, low profile and excellent thermal efficiency of the LPCC package makes the MGA-412P8 an ideal choice as a power amplifier for mobile IEEE 802.11b/g WLAN applications. It achieves +19.0 dBm linear output power that meets 3% EVM at 54Mbps data rate (OFDM Modulation), and 23dBm at 11Mbps (CCCK modulation). Features * Advanced GaAs E-pHEMT * Integrated power detector & power down functions * High efficiency * Single +3.3V Supply * Small Footprint: 2x2mm2 * Low Profile: 0.8mm max. Specifications * At 2.452 GHz; 3.3V (Typ.) : * Gain: 25.5 dB * P1dB: 25.3 dBm * Pout linear with IEEE 802.11g OFDM modulation @54Mbps data rate: 19.0 dBm @ 3% EVM. * Current @19dBm linear Pout: (54Mbps) : 95mA * Reverse Isolation (typ): > 40dB * Quiescent current (typ): 40mA * Meets IEEE 802.11b @11Mbps (CCCK modulation) with Pout: 23dBm while consuming 200mA. Component Image 2.0 x 2.0 x 0.75 mm 8-lead LPCC Pin 8 Pin 7 Pin 6 Pin 5 Bottom View 1:Gnd 2:RFin 2:Gnd 4:Vdd1 Top View Note: Package marking provides Orientation and Identification "1C" = Product Code "X" = Date code indicates month of manufacture 8:Det Pin 1 Pin 2 Pin 3 Pin 4 Applications * Power Amplifier for IEEE 802.11b/g WLAN applications * Bluetooth Power Amplifier * 2.4GHz ISM band applications 1CX 7:RFout 6:Vdd2 5:Pwr Down Attention: Attention Observe precautions for handling electrostatic sensitive devices. ESD Machine Model = 50 V ESD Human Body Model = 200 V Refer to Avago Technologies Application Note A004R: Electrostatic Discharge, Damage and Control. Absolute Maximum Rating [1] Tc=25C Sym bol V dd P in P diss Tj T STG Param eter Device Voltage, RF output to ground CW RF Input Power (Vdd = 3.3V ) Total Power Dissipation [3] Junction Temperature Storage Tem perature Units V dBm W o o Absolute M ax. 5 10 0.8 150 -65 to 150 Thermal Resistance [2] (Vdd = 3.3V), jc = 33.3 C/W Notes: 1. Operation of this device in excess of any of these limits may cause permanent damage. 2. Thermal resistance measured using 150 C Liquid Crystal Measurement Technique. 3. Board (package belly) temperature, Tb is 25 C. Derate 30mW/ C for Tb>123.36 C. C C Product Consistency Distribution Charts [4,5] USL LSL 30 35 40 45 50 55 24 24.2 24.6 25 25.2 25.6 26 Figure 1. Id@ 2.452GHz; Nominal = 40mA, USL: 55mA Figure 2. P1dB @ 2.452GHz; Nominal = 25.3dBm, LSL: 24dB LSL 23 24 25 26 27 28 Notes: 4. Distribution data sample size is 500 samples taken from 3 different wafers and 3 different lots. Future wafers allocated to this product may have nominal values anywhere between the upper and lower limits. 5. Measurements are made on production test board, which represents a trade-off between optimal Gain and P1dB. Circuit losses have been de-embedded from actual measurements. Figure 3. Gain@ 2.452GHz; Nominal = 25.5dB, LSL: 23 dB 2 Electrical Specifications[6] Tc = 25 C, 2.452 GHz [typical, measured on demo board].DC bias for RF parameters Vdd =Vsd=3.3V Unless otherwise specified, all data are taken with OFDM 64-QAM modulated signal per IEEE802.11g specifications at 54Mbps data rate. Symbol Idq Isd I_leak G Psat P1dB Poutn Idn Poutl Idl S11 S22 S12 OIP3 Parameter Quiescent current Current drawn by Shutdown pin Total current consumption at shutdown(Vsd=0V) Gain Saturated Power 1 dB Compression Point Gain Flatness (2.4 - 2.5GHz) Max Pout per IEEE 802.11b mask (CCCK modulation) Current @ 23dBm 802.11b BPSK Linear Power @ 3% EVM, 54Mbps OFDM Current @ 3% EVM Input Return Loss Output Return Loss Isolation Large Signal, Output IP3 (2-tone at 10MHz from carrier freq) Units mA mA uA dB dBm dBm dB dBm mA dBm mA dB dB dB dBm 24 23 MIN TYP 40 0.5 5 25.5 27 25.3 1 23 200 19 95 -5.5 -11.5 >40 38 MAX 55 Notes: 6. Measurements taken on demo board as shown on Figure 4. Excess circuit losses have been de-embedded from actual measurements. Standard deviation and typical data based on at least 500 parts sample size from 2 wafer lots. Future wafers allocated to this product may have nominal values any where within the upper and lower spec limits. 3 Demo board Diagram DET 5.6nH 5.6nH 0ohm 6.8pF 1.2pF 6.8pF 1.5pF 0.4mm 0.56mm INPUT 5.6nH 1000pF OUTPUT C 2.2uF 0ohm 1000pF 22ohm 0.1uF OCT 2005 Rev 1.1 SD 18nH Vdd Figure 4. Demo board and Application Circuit Components 4 Schematic Diagram Detector output L L5 L=5.6 nH R= L L6 L=5.6 nH R= C C3 C=1.2 pF RF Input 1 2 8 7 6 5 RF output P ort P1 C C1 C=6.8 pF 3 4 TLIN* TL1 C C C2 C4 C=1.5 pF C=6.8 pF P ort P2 L L3 L=5.6 nH C C7 C=2.2 uF C C8 C=1000 pF C C5 C=1000 pF R R1 R=22 Ohm L L4 L=18 nH C C6 C=0.1 uF Vshutdown = +3.3V ON Vshutdown =0V OFF Figure 5. Demo Board Schematic Diagram Vdd = +3.3V nom * 0.56mm wide on 10mil thick Rogers RO4350 board - Components L6, C2 and C3 should be located as close to the packaged device pins as possible. - Components R1 and L4 are used to isolate the test board from Power Supply effects. - Recommended PCB material is Roger, RO4350. - Suggested component values may vary according to layout and PCB material. 5 MGA-412P8 Typical Performance I Tc = +25 C, Vdd = 3.3V Input Signal=CW unless stated otherwise. 30 25 20 Pout & Gain Pout and Gain vs Pin Vdet vs Pout 2.5 VDD=3V 2 Pout Detector(V) VDD=3.3V VDD=3.6V Gain 15 10 5 0 -25 1.5 1 0.5 0 -20 -15 -10 -5 0 5 5 7 9 11 13 15 17 19 21 23 25 27 Input Power (dBm) Figure 6. Output Power and Gain vs Input Power Output Power (dBm) Figure 7. Detector vs Output Power MGA-412P8 Typical Performance II Tc = +25 C, Vdd = 3.3V Input Signal=OFDM signal with 54Mbps, Modulation=64QAM unless stated otherwise. EVM & Current vs Modulated Pout 12 11 10 9 8 7 6 5 4 3 2 1 0 180 EVM Current 160 140 120 EVM vs Modulated Pout 12 11 10 9 8 7 6 5 4 3 2 1 0 5 7 VDD=3.0V VDD=3.3V VDD=3.6V Current (mA) EVM (%) 100 80 60 40 20 0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0 24.0 EVM(%) 9 Modulated Output Power (dBm) 11 13 15 17 19 21 Modulated Output Power (dBm) 23 25 Figure 8. EVM & Current vs Output Power Total current vs Modulated Output Power 180 160 140 120 100 80 60 40 20 0 5 7 9 11 13 15 17 19 21 Modulated Output Power(dBm) 23 25 VDD=3.0V VDD=3.3V VDD=3.6V Figure 9. EVM vs Modulated Output Power PAE vs Modulated Output Power 60 50 40 IDD(mA) PAE% 30 20 10 0 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 Modulated Output Power (dBm) Figure 10. Total Current vs Modulated Output Power Figure 11. PAE vs Modulated Output Power 6 12 11 10 9 8 7 6 5 4 3 2 1 0 5 7 EVM vs Modulated Output Power 27.0 26.5 26.0 25.5 25.0 24.5 24.0 23.5 23.0 22.5 22.0 2.40 2.42 2.44 2.46 2.48 2.50 2.52 2.54 2.56 2.58 2.60 freq, GHz 9 11 13 15 17 19 21 Modulated Output Power (dBm) 23 25 Figure 12. EVM vs Modulated Output Power at different Temperature dB(S(2,1)) EVM(%) 25 Deg C -40 Deg C 85 Deg C -4 -6 dB(S(2,2)) dB(S(1,1)) -8 -10 -12 2.40 2.42 2.44 2.46 2.48 2.50 2.52 2.54 2.56 2.58 2.60 freq, GHz Figure 13. Typical Spectral Plot conforming compliance to IEEE 802.11b 11Mbps CCCK modulation mask at 23dBm output power Figure 14. Typical Scattering Parameter Plots 2 x 2LPCC (JEDEC DFP-N) Package Dimensions D1 P pin1 D pin1 1 2 8 DIMENSIONS E 6 5 SYMBOL A A1 A2 b D D1 E E1 e MIN. 0.70 0 0.225 1.9 0.65 1.9 1.45 NOM. 0.75 0.02 0.203 REF 0.25 2.0 0.80 2.0 1.6 0.50 BSC MAX. 0.80 0.05 0.275 2.1 0.95 2.1 1.75 E1 R e 3 4 1CX 7 L b Bottom View Top View A A1 A2 A DIMENSIONS ARE IN MILLIMETERS End View End View 7 PCB Land Pattern and Stencil Design 2.80 (110.24) 0.70 (27.56) 0.25 (9.84) PIN 1 0.20 (7.87) Solder mask RF transmission line + 2.72 (107.09) 0.63 (24.80) 0.22 (8.86) PIN 1 0.32 (12.79) 0.50 (19.68) 1.54 (60.61) 0.25 (9.74) 0.25 (9.84) 0.50 (19.68) 1.60 (62.99) 0.28 (10.83) 0.60 (23.62) 0.80 (31.50) 0.15 (5.91) 0.55 (21.65) 0.72 (28.35) 0.63 (24.80) PCB Land Pattern (top view) Stencil Layout (top view) Device Orientation REEL 4 mm 8 mm CARRIER TAPE USER FEED DIRECTION COVER TAPE 1CX 1CX 1CX 1CX Part Number Ordering Information Part Number MGA-412P8-TR1G MGA-412P8-TR2G MGA-412P8-BLKG No. of Devices Container 3000 10000 100 7" Reel 13" Reel antistatic bag For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Pte. in the United States and other countries. Data subject to change. Copyright (c) 2006 Avago Technologies Pte. All rights reserved. AV01-0236EN - June 2, 2006 |
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